photo diode silicon pin led lamps lead-free parts pb lpd62343/a-pf ligitek electronics co.,ltd. property of ligitek only data sheet doc. no : qw0905-lpd62343/a-pf rev. : a date : 31 - jul. - 2014 l dcc
nit description the lpd62343/a-pf series are silicon planar p/n photodiodes incorporated in plastic package that simultaneously serve as filter and are also transparent for infrared emission their terminals are soldering tabs arranged in 2.54mm center to center spacing due to their design the diodes can vertically be assembled on pc boards arrays can be realized by multiple arrangement versatile photodetectors are suitable for diodes as well as voltaic cell operation the signal noise ratio is particularly favorable even at low illuminance the p/n photodiode are outstanding for low junction capacitance high cut-off frequency and fast switching times. they are particularly suitable for ir sound transmission and remote control the cathode of lpd62343/a-pf photodiode is marked by a stamping on the package edge reverse break down voltage rise time,fall time peak wavelength of max sensitivity total capacitance open circuit voltage short circuit current dark current storage temperature power dissipation operating temperature characteristic note:1.all dimension are in millimeters tolerance is 0.25 unless otherwise noted 2.specifications are subject to change without notice electrical characteristics at (ta=25) ? maximum ratings (ta=25) ? p =940nm ee=0.5mw/c O ee=0.5mw/c O p =940nm v r =3v f=1mhz v r =10v r l =1k smax tr,tf c t voc isc v r =5v 1.0 ee=0mw/c O _ 50 940 20 350 2.0 pd topr tstg v br test condition symbol symbol i d v r =10v characteristic 30 min ee=0mw/c O - 40 +60 typ 1.0 max 30 - 30 +60 150 rating package dimension ns nm pf mv ua v unit na mw part no. lpd62343/a-pf page1/3 ligitek electronics co.,ltd. property of ligitek only 25.0min 2.54typ 1.0min 0.5 typ 1.5max 3.9 4.05 6.0
dip soldering preheat: 120 0 0 25 120 50 2 100 150 time(sec) 260 260
part no. lpd62343/a-pf page 3/3 description the purpose of this is the resistance of the device which is laid under condition of high temperature for hours. the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. test condition 1.ta=-40 ????? ?? ????? ????? ?? ????? ? ?? ??? ? ??? ??? ????? ?? ????? ????? ??????? ? ?????? ?? ??? ? ?? ? ?? ? ???????? ??????? ???????? ?????? ????? ???????? ??? ??????? ???? ?????? ????? ????? ?? ?? ??
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